Mark LaPedus EE Times (10/12/2009 6:04 PM EST)

SEOUL -- At the 11th International Semiconductor 2009 (i-Sedex) trade show here, Hynix Semiconductor Inc. has rolled out its second-generation 1-Gbit DDR3 SDRAM device, based on 54-nm process technology.

The device is offered in x4 (H5TQ1G43TFR) and x8 (H5TQ1G83TFR) organizations. It operates at 1.5 Volts and reduces power consumption by 30 percent over the previous devices.

Applications such as data centers, servers and supercomputers--as well as mobile applications requiring longer battery life--could take advantage of this product. The product has been produced in mass volume from this month.

It is said to be an ''eco-friendly'' design. The new design philosophy will also be applied to future design of DRAM components including 2-Gbit DDR3 with 40-nm-class technology.