LONDON The Fraunhofer Institute of Microelectronics Circuits and Systems (Duisburg, Germany) and Livingston, Scotland-based Point 35 Microstructures have collaborated to develop a process module for advanced MEMS manufacturing.
The module enables the a-silicon film to be deposited in a modified industry standard PECVD reactor as a sacrificial etch layer, for subsequent isotropic release etching using the so-called memsstar SVR system.
"We are already seeing fast growing sales and a pipeline of development projects, as a direct result of our joint development with Fraunhofer IMS," said Mike Leavy, CEO and co-founder of Point 35 Microstructures.
He added the ability to implement qualified sacrificial etch schemes using proven equipment will allow MEMS organisations to reduce development time and get their new devices to market faster.
Professor Holger Vogt from the Fraunhofer IMS added the partners have developed thin and thick film technology which can be doped or undoped and will enable MEMS devices to be created using standard materials within existing wafer fabs and on standard equipment.
The groups stress the module has fully characterized etch selectivity to many other materials, fast etch rates and excellent uniformity and repeatability. They add the integrated process sequence can be used within standard CMOS facilities and on top of CMOS wafers if required, which should enable many possible new applications.
The memsstar system uses vapour phase single wafer processing for the release etch and surface modification process steps as required in most MEMS devices.
System configurations can be matched to suit any situation from R&D to high throughput production with seamless transfer between environments.
Applications for the process are said to include motion sensors, micro displays, silicon microphones, fluidic channels, bolometer arrays and pressure sensors.
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